silicon n-channel power mosfet CS20N60AND wuxi china resources huajing microelectronics co., ltd. page 1 of 10 2011 r huajing discrete devices general description CS20N60AND, the silicon n-ch annel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. the transistor can be used in various power switching circuit fo r system miniaturization and higher efficiency. the package form is to-3p(n), which accords with the rohs standard. features z fast switching z low on resistance( rdson 0.32 ? ) z low gate charge ( typical data:95nc ) z low reverse transfer capacitances (typical:38pf) z 100% single pulse avalanche energy test applications automotive dc motor control and class d amplifier. absolute tc= 25 unless otherwise specified symbol parameter rating units v dss drain-to-source voltage 600 v continuous drain current 20 a i d continuous drain current t c = 100 c 13 a i dm a1 pulsed drain current 80 a v gs gate-to-source voltage 30 v e as a2 single pulse avalanche energy 1500 mj e ar a1 avalanche energy ,repetitive 250 mj i ar a1 avalanche current 7.1 a dv/dt a3 peak diode recovery dv/dt 5.0 v/ns power dissipation 280 w p d derating factor above 25c 2.24 w/ v esd(g-s) gate source esd (hbm-c= 100pf, r=1.5k ) 6000 v t j t stg operating junction and storage temperature range 150 ?55 to 150 t l maximumtemperature for soldering 300 v dss 600 v i d 20 a p d (t c =25 ) 280 w r ds(on)typ 0.23 ?
wuxi china resources huajing microelectronics co., ltd. page 2 of 10 2011 r CS20N60AND huajing discrete devices electrical characteristics tc= 25 unless otherwise specified off characteristics rating symbol parameter test conditions min. typ. max. units v dss drain to source breakdown voltage v gs =0v, i d =250a 600 -- -- v bv dss / t j bvdss temperature coefficient id=250ua,reference2 5 -- 0.6 -- v/ v ds = 600v, v gs = 0v, t a = 25 -- -- 25 i dss drain to source leakage current v ds =480v, v gs = 0v, t a = 125 -- -- 250 a i gss(f) gate to source forward leakage v gs =+30v -- -- 10 a i gss(r) gate to source reverse leakage v gs =-30v -- -- -10 a on characteristics rating symbol parameter test conditions min. typ. max. units r ds(on) drain-to-source on-resistance v gs =10v,i d =10a -- 0.23 0.32 ? v gs(th) gate threshold voltage v ds = v gs , i d = 250a 2.0 4.0 v pulse width tp 380s, ? 2% dynamic characteristics rating symbol parameter test conditions min. typ. max. units g fs forward transconductance v ds =15v, i d =10a -- 18 -- s c iss input capacitance -- 4900 -- c oss output capacitance -- 360 -- c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1.0mhz -- 38 -- pf resistive switching characteristics rating symbol parameter test conditions min. typ. max. units t d(on) turn-on delay time -- 20 -- tr rise time -- 28 -- t d(off) turn-off delay time -- 90 -- t f fall time i d =10a v dd =200v v gs = 10v r g =4.7 ? -- 46 -- ns q g total gate charge -- 95 q gs gate to source charge -- 18 -- q gd gate to drain (?miller?)charge i d =20a v dd =300v v gs = 10v -- 38 -- nc
wuxi china resources huajing microelectronics co., ltd. page 3 of 10 2011 r huajing discrete devices CS20N60AND source-drain diode characteristics rating symbol parameter test conditions min. typ. max. units i s continuous source current (body diode) -- -- 20 a i sm maximum pulsed current (body diode) -- -- 80 a v sd diode forward voltage i s =20a,v gs =0v -- -- 1.5 v trr reverse recovery time -- 658 ns qrr reverse recovery charge i s =20a,t j = 25 c di f /dt=100a/us, v gs =0v -- 7.4 c pulse width tp 380s, ? 2% symbol parameter typ. units r jc junction-to-case 0.45 /w r ja junction-to-ambient 40 /w gate-source zener diode rating symbol parameter test conditions min. typ. max. units v gso gate-source breakdown voltage i gs = 1ma(open drain) 30 v the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zene r voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s inte grity. these integrated zener diodes thus avoid the usage of external components. a1 repetitive rating; pulse width limited by maximum junction temperature a2 l=10.0mh, i d =17.3a, start t j =25 a3 i sd =20a,di/dt 100a/us,v dd bv ds, start t j =25
wuxi china resources huajing microelectronics co., ltd. page 4 of 10 2011 r huajing discrete devices CS20N60AND characteristics curve 75 400 100 25 0 200 300 50 100 125 150 0 tc , case temperature , c pd , power dissipation watts
wuxi china resources huajing microelectronics co., ltd. page 5 of 10 2011 r huajing discrete devices CS20N60AND
wuxi china resources huajing microelectronics co., ltd. page 6 of 10 2011 r huajing discrete devices CS20N60AND
wuxi china resources huajing microelectronics co., ltd. page 7 of 10 2011 r huajing discrete devices CS20N60AND testcircuita ndwaveform
wuxi china resources huajing microelectronics co., ltd. page 8 of 10 2011 r huajing discrete devices CS20N60AND
wuxi china resources huajing microelectronics co., ltd. page 9 of 10 2011 r huajing discrete devices CS20N60AND package information Z (mm) ? min max a 15.10 15.90 b 19.30 20.30 c 4.70 4.90 d 1.90 2.10 e 0.90 1.10 f 0.50 0.70 g1 2.00 2.20 g2 3.00 3.20 h 3.30 3.70 i 2.70 2.90 l 19.5 20.9 n 5.25 5.65 3.10 3.30 to-3p(n) package
page 10 of 10 2011 r huajing discrete devices CS20N60AND the name and content of poisonous an d harmful material in products hazardous substance part?s name pb hg cd cr(vi) pbb pbde limit 0.1% 0.1% 0.01% 0.1% 0.1% 0.1% lead frame molding compound chip wire bonding solder note means the hazardous material is unde r the criterion of sj/t11363-2006. means the hazardous material exceeds the criterion of sj/t11363-2006. the plumbum element of solder exist in products presently, but within the allowed range of eurogroup?s rohs. warnings 1. exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the mach ine. it is suggested to be used under 80 percent of the maximun ratings of the device. 2. when installing the heatsink, plea se pay attention to the torsional moment and the smoothness of the heatsink. 3. vdmosfets is the device which is sensitive to the static electricity, it is necessory to protect the device from being damaged by the static electricity when using it. 4. this publication is made by huajing microelectronics and subject to regular change without notice.
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